Towards wafer-size graphene layers by atmospheric pressure graphitization of 
silicon carbide

Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten; Jobst, Johannes; Kellogg, Gary L.; Ley, Lothar; McChesney, Jessica L.; Ohta, Taisuke; Reshanov, Sergey A.; Röhrl, Jonas; Rotenberg, Eli; Schmid, Andreas K.; Waldmann, Daniel; Weber, Heiko B.; Seyller, Thomas

doi:10.1038/nmat2382

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Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

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Horn, Karsten
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Emtsev_Nature_Mat.pdf
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引用

Emtsev, K. V., Bostwick, A., Horn, K., Jobst, J., Kellogg, G. L., Ley, L., McChesney, J. L., Ohta, T., Reshanov, S. A., Röhrl, J., Rotenberg, E., Schmid, A. K., Waldmann, D., Weber, H. B., & Seyller, T. (2009). Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Materials, 8, 203-207. doi:10.1038/nmat2382.

引用: https://hdl.handle.net/11858/00-001M-0000-0010-FA06-C

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