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  Berry curvature engineering by gating two-dimensional antiferromagnets

Du, S., Tang, P., Li, J., Lin, Z., Xu, Y., Duan, W., et al. (2020). Berry curvature engineering by gating two-dimensional antiferromagnets. Physical Review Research, 2(2): 022025(R). doi:10.1103/PhysRevResearch.2.022025.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0006-53FA-3 Version Permalink: https://hdl.handle.net/21.11116/0000-0006-6FE3-E
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 Creators:
Du, S.1, Author
Tang, P.2, 3, Author           
Li, J.1, Author
Lin, Z.4, Author
Xu, Y.1, 5, 6, Author
Duan, W.1, 4, 5, Author
Rubio, A.2, 3, 7, 8, Author           
Affiliations:
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, ou_persistent22              
2Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266715              
3Center for Free-Electron Laser Science, ou_persistent22              
4Institute for Advanced Study, Tsinghua University, ou_persistent22              
5Collaborative Innovation Center of Quantum Matter, ou_persistent22              
6RIKEN Center for Emergent Matter Science (CEMS), ou_persistent22              
7Nano-Bio Spectroscopy Group and ETSF, Dpto. Fisica de Materiales, Universidad del País Vasco UPV/EHU, ou_persistent22              
8Center for Computational Quantum Physics, Flatiron Institute, ou_persistent22              

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 Abstract: Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi2Te4 thin films. Under an out-of-plane electric field that breaks PT symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi2Te4 thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototypes for future AFM spintronic applications.

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Language(s): eng - English
 Dates: 2019-10-042020-04-042020-05-04
 Publication Status: Published online
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 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevResearch.2.022025
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Project name : S.D., J.L., Z.L., Y.X., and W.D. acknowledge financial support from the Basic Science Center Project of the NSFC (Grant No. 51788104), the Ministry of Science and Technology of China (Grants No. 2016YFA0301001, No. 2018YFA0307100, and No. 2018YFA0305603), the National Natural Science Foundation of China (Grants No. 11674188 and No. 11874035), and the Beijing Advanced Innovation Center for Future Chip (ICFC). A.R. and P.T. acknowledge financial support from the European Research Council (ERC-2015-AdG-694097). P.T. acknowledges funding received from the European Union Horizon 2020 research and innovation program under Marie Sklodowska-Curie Grant Agreement No. 793609. The Flatiron Institute is a division of the Simons Foundation.
Grant ID : 793609
Funding program : Horizon 2020 (H2020)
Funding organization : European Commission (EC)

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Title: Physical Review Research
Source Genre: Journal
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Publ. Info: College Park, Maryland, United States : American Physical Society (APS)
Pages: - Volume / Issue: 2 (2) Sequence Number: 022025(R) Start / End Page: - Identifier: ISSN: 2643-1564
CoNE: https://pure.mpg.de/cone/journals/resource/2643-1564