Polarization-induced charge carrier separation in polar and nonpolar grown GaN 
quantum dots

Marquardt, O.; Hickel, T.; Neugebauer, J.

doi:10.1063/1.3246864

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Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots

Marquardt, O., Hickel, T., & Neugebauer, J. (2009). Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots. Journal of Applied Physics, 106, 083707-1-083707-7. doi:10.1063/1.3246864.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3E46-1 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3E48-E

Genre: Journal Article

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Creators:
Marquardt, O.¹, Author
Hickel, T.¹, Author
Neugebauer, J.², Author

Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Date issued: 2009-10-21

Publication Status: Issued

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Identifiers: eDoc: 438998
DOI: 10.1063/1.3246864

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Title: Journal of Applied Physics

Alternative Title : J. Appl. Phys.

Source Genre: Journal

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Pages: - Volume / Issue: 106 Sequence Number: - Start / End Page: 083707-1 - 083707-7 Identifier: -