Electronic structure of 1/6 <20 2¯3> partial dislocations in wurtzite GaN

Kioseoglou, J.; Kalesaki, E.; Lymperakis, L.; Neugebauer, J.; Komninou, P.; Karakostas, T.

doi:10.1063/1.3569856

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Electronic structure of 1/6 <20 2¯3> partial dislocations in wurtzite GaN

Kioseoglou, J., Kalesaki, E., Lymperakis, L., Neugebauer, J., Komninou, P., & Karakostas, T. (2011). Electronic structure of 1/6 <20 2¯3> partial dislocations in wurtzite GaN. Journal of Applied Physics, 109, 083511-1-083511-6. doi:10.1063/1.3569856.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3521-A Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3523-6

Genre: Journal Article

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Creators:
Kioseoglou, J., Author
Kalesaki, E., Author
Lymperakis, L.¹, Author
Neugebauer, J.², Author
Komninou, P., Author
Karakostas, T., Author

Affiliations:
1Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Date issued: 2011

Publication Status: Issued

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Identifiers: eDoc: 625743
DOI: 10.1063/1.3569856

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Title: Journal of Applied Physics

Alternative Title : J. Appl. Phys.

Source Genre: Journal

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Pages: - Volume / Issue: 109 Sequence Number: - Start / End Page: 083511-1 - 083511-6 Identifier: -