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  Comparison of the gas release at a hydrophobic and a hydrophilic direct bonding interface

Mack, S., Baumann, H., Werner, H., & Schlögl, R. (1998). Comparison of the gas release at a hydrophobic and a hydrophilic direct bonding interface. In U. Gösele (Ed.), Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications (pp. 299-306). Pennington, NJ: Electrochemical Society.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1E7A-8 Version Permalink: https://hdl.handle.net/21.11116/0000-0007-0261-9
Genre: Book Chapter

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 Creators:
Mack, S.1, Author
Baumann, H., Author
Werner, Harald2, Author           
Schlögl, Robert2, Author           
Affiliations:
1Max Planck Society, ou_persistent13              
2Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              

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Language(s): eng - English
 Dates: 1998
 Publication Status: Issued
 Pages: XI, 618 S.
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 2021
URI: 1-566-77189-7
 Degree: -

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Title: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications
Source Genre: Book
 Creator(s):
Gösele, Ulrich, Editor
Affiliations:
-
Publ. Info: Pennington, NJ : Electrochemical Society
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 299 - 306 Identifier: -

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Title: Proceedings volume / Electrochemical Society
Source Genre: Series
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 97-36 Sequence Number: - Start / End Page: - Identifier: -