Growth process, characterization and optoelectronic properties of InAsSbP 
dot-pit cooperative nanostructures

Marquardt, O.; Gambaryan, K. M.; Aroutiounian, V. M.; Hickel, T.; Neugebauer, J.

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Growth process, characterization and optoelectronic properties of InAsSbP dot-pit cooperative nanostructures

Marquardt, O., Gambaryan, K. M., Aroutiounian, V. M., Hickel, T., & Neugebauer, J. (2010). Growth process, characterization and optoelectronic properties of InAsSbP dot-pit cooperative nanostructures. Talk presented at VCIAN 2010. Santorini, Greece. 2010-06-21 - 2010-06-25.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-38B0-3 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-38B2-0

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Creators:
Marquardt, O.¹, Author
Gambaryan, K. M., Author
Aroutiounian, V. M., Author
Hickel, T.¹, Author
Neugebauer, J.², Author

Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

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Identifiers: eDoc: 491010

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Title: VCIAN 2010

Place of Event: Santorini, Greece

Start-/End Date: 2010-06-21 - 2010-06-25

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