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  Effect of layer-by-Layer electrostatic assemblies on the surface potential and current voltage characteristic of metal-insulator-semiconductor structures

Gorin, D. A., Yashchenok, A. M., Manturov, A. O., Kolesnikova, T. A., & Möhwald, H. (2009). Effect of layer-by-Layer electrostatic assemblies on the surface potential and current voltage characteristic of metal-insulator-semiconductor structures. Langmuir, 25(21), 12529-12534. doi:10.1021/la901379d.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-4EC1-5 Version Permalink: https://hdl.handle.net/21.11116/0000-0007-557B-0
Genre: Journal Article

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442791.pdf (Publisher version), 3MB
 
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 Creators:
Gorin, D. A.1, Author           
Yashchenok, A. M., Author
Manturov, A. O., Author
Kolesnikova, T. A., Author
Möhwald, H.2, Author           
Affiliations:
1Grenzflächen, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_1863287              
2Helmuth Möhwald, Grenzflächen, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_1863312              

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Language(s): eng - English
 Dates: 2009
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 442791
ISI: 000271106600024
DOI: 10.1021/la901379d
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Title: Langmuir
  Abbreviation : Langmuir
Source Genre: Journal
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Publ. Info: Columbus, OH : American Chemical Society
Pages: - Volume / Issue: 25 (21) Sequence Number: - Start / End Page: 12529 - 12534 Identifier: ISSN: 0743-7463