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  Growth and characterization of Sc-doped EuO thin films

Altendorf, S. G., Reisner, A., Chang, C. F., Hollmann, N., Rata, A. D., & Tjeng, L. H. (2014). Growth and characterization of Sc-doped EuO thin films. Applied Physics Letters, 104(5): 052403, pp. 1-4. doi:10.1063/1.4863752.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0018-865C-3 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-589E-2
Genre: Journal Article

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 Creators:
Altendorf, S. G.1, Author              
Reisner, A.2, Author              
Chang, C. F.3, Author              
Hollmann, N.4, Author              
Rata, A. D.5, Author              
Tjeng, L. H.6, Author              
Affiliations:
1Simone Altendyorf, Phsics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863458              
2Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863445              
3Chun-Fu Chang, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863447              
4Nils Hollmann, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863456              
5Diana Rata, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863449              
6Liu Hao Tjeng, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863452              

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 Abstract: The preparation of 3d-transition metal-doped EuO thin films by molecular beam epitaxy is investigated using the example of Sc doping. The Sc-doped EuO samples display a good crystalline structure, despite the relatively small ionic radius of the dopant. The Sc doping leads to an enhancement of the Curie temperature to up to 125 K, remarkably similar to previous observations on lanthanide-doped EuO. (C) 2014 AIP Publishing LLC.

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 Dates: 2014-02-03
 Publication Status: Published in print
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 Table of Contents: -
 Rev. Method: -
 Identifiers: ISI: 000331644100069
DOI: 10.1063/1.4863752
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Title: Applied Physics Letters
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 104 (5) Sequence Number: 052403 Start / End Page: 1 - 4 Identifier: Other: 0003-6951
CoNE: /journals/resource/954922836223