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Abstract:
The electronic structure of polycrystalline Bi2S3 thin films deposited
by thermal evaporation under high vacuum conditions was investigated
with respect to their potential use as absorber materials in p-i-n solar
cells by means of hard x-ray photoemission spectroscopy at the PETRA III
synchrotron. A clear influence of the post-deposition treatment on the
electronic structure could be observed, resulting in a lowering of the
Fermi level as well as in a change of the electronic states in the
valence band. Furthermore, chemical shifts of Bi2S3 were determined in
the bulk-sensitive hard x-ray regime as Delta E-B,E-Bi = 1:35 eV and
Delta E-B,E-S = -2:80 eV. (C) 2012 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4748299]
