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  Ab initio EPR parameters for dangling-bond defect complexes in silicon: Effect of Jahn-Teller distortion

Pfanner, G., Freysoldt, C., Neugebauer, J., & Gerstmann, U. (2012). Ab initio EPR parameters for dangling-bond defect complexes in silicon: Effect of Jahn-Teller distortion. Physical Review B, 85(19): 195202, pp. 1-8. doi:10.1103/PhysRevB.85.195202.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-29C5-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002E-23A8-6
Genre: Journal Article

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 Creators:
Pfanner, Gernot1, Author           
Freysoldt, Christoph1, Author           
Neugebauer, Jörg2, Author           
Gerstmann, Uwe3, Author           
Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              
3Lehrstuhl für Theoretische Physik, Universität Paderborn, 33095 Paderborn, Germany, ou_persistent22              

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Language(s): eng - English
 Dates: 2012-05-04
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 614921
DOI: 10.1103/PhysRevB.85.195202
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
 Creator(s):
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Publ. Info: Woodbury, NY : American Physical Society
Pages: 8 Volume / Issue: 85 (19) Sequence Number: 195202 Start / End Page: 1 - 8 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008