Polarization-induced charge carrier separation in realistic polar and nonpolar 
GaN quantum dots

Marquardt, O.; Hickel, T.; Neugebauer, J.

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Polarization-induced charge carrier separation in realistic polar and nonpolar GaN quantum dots

Marquardt, O., Hickel, T., & Neugebauer, J. (2010). Polarization-induced charge carrier separation in realistic polar and nonpolar GaN quantum dots. Talk presented at Computational Materials Science on Complex Energy Landscapes Workshop. Imst, Austria. 2010-01-25 - 2010-01-29.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3B27-1 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3B29-E

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Creators:
Marquardt, O.¹, Author
Hickel, T.¹, Author
Neugebauer, J.², Author

Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

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Identifiers: eDoc: 446174

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Title: Computational Materials Science on Complex Energy Landscapes Workshop

Place of Event: Imst, Austria

Start-/End Date: 2010-01-25 - 2010-01-29

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