Polarization-induced charge carrier separation in realistic polar and nonpolar 
GaN quantum dots

Marquardt, O.; Hickel, T.; Neugebauer, J.

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Polarization-induced charge carrier separation in realistic polar and nonpolar GaN quantum dots

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Marquardt, O.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Hickel, T.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Marquardt, O., Hickel, T., & Neugebauer, J. (2010). Polarization-induced charge carrier separation in realistic polar and nonpolar GaN quantum dots. Talk presented at Computational Materials Science on Complex Energy Landscapes Workshop. Imst, Austria. 2010-01-25 - 2010-01-29.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-3B27-1

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