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  Pressure-Dependent Relaxation in the Photoexcited Mott Insulator ET-F2 TCNQ: Influence of Hopping and Correlations on Quasiparticle Recombination Rates

Mitrano, M., Cotugno, G., Clark, S. R., Singla, R., Kaiser, S., Stähler, J., et al. (2014). Pressure-Dependent Relaxation in the Photoexcited Mott Insulator ET-F2 TCNQ: Influence of Hopping and Correlations on Quasiparticle Recombination Rates. Physical Review Letters, 112(11): 117801. doi:10.1103/PhysRevLett.112.117801.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-001A-337C-E Version Permalink: http://hdl.handle.net/21.11116/0000-0003-5933-0
Genre: Journal Article

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 Creators:
Mitrano, Matteo1, Author              
Cotugno, Giovanni1, 2, Author              
Clark, S. R.2, 3, Author
Singla, Rashmi1, Author              
Kaiser, Stefan1, Author              
Stähler, Julia4, Author              
Beyer, R.5, Author
Dressel, M.5, Author
Baldassarre, L.6, Author
Nicoletti, Daniele1, Author              
Perucchi, A.7, Author
Hasegawa, T.8, Author
Okamoto, H.9, Author
Jaksch, D.2, 3, Author
Cavalleri, Andrea1, 2, Author              
Affiliations:
1Quantum Condensed Matter Dynamics, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, Luruper Chaussee 149, Geb. 99 (CFEL), 22761 Hamburg, DE, ou_1938293              
2Department of Physics, Oxford University, Clarendon Laboratory, Parks Road, OX1 3PU Oxford, United Kingdom, ou_persistent22              
3Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, Singapore 117543, Singapore, ou_persistent22              
4Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany, ou_persistent22              
51. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany, ou_persistent22              
6Center for Life NanoScience@Sapienza, Istituto Italiano di Tecnologia, V.le Regina Elena 291, 00185 Rome, Italy, ou_persistent22              
7INSTM UdR Trieste-ST and Elettra - Sincrotrone Trieste S.C.p.A., Area Science Park, Area Science Park, 34012 Basovizza, Trieste, Italy, ou_persistent22              
8National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan, ou_persistent22              
9Department of Advanced Material Science, University of Tokyo, Chiba 277-8561, Japan, ou_persistent22              

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Free keywords: PACS numbers: 78.30.Jw, 78.20.Ci, 78.47.jg, 78.55.Kz
 Abstract: We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET-F2 TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.

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Language(s): eng - English
 Dates: 2013-08-282014-03-182014-03-21
 Publication Status: Published in print
 Pages: 5
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1103/PhysRevLett.112.117801
BibTex Citekey: PhysRevLett.112.117801
arXiv: 1308.2189
 Degree: -

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Title: Physical Review Letters
  Abbreviation : Phys. Rev. Lett.
Source Genre: Journal
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Publ. Info: Woodbury, N.Y. : American Physical Society
Pages: - Volume / Issue: 112 (11) Sequence Number: 117801 Start / End Page: - Identifier: ISSN: 0031-9007
CoNE: /journals/resource/954925433406_1