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  Ordering phenomena and formation of nanostructures in InxGa1−xN layers coherently grown on GaN(0001)

Lee, S., Freysoldt, C., & Neugebauer, J. (2014). Ordering phenomena and formation of nanostructures in InxGa1−xN layers coherently grown on GaN(0001). Physical Review B, 90(24): 245301. doi:10.1103/PhysRevB.90.245301.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0024-5B75-6 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002E-2A33-1
Genre: Journal Article

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 Creators:
Lee, Sangheon1, Author              
Freysoldt, Christoph1, Author              
Neugebauer, Jörg2, Author              
Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
 Dates: 2014-10-092014-11-252014-12-08
 Publication Status: Published in print
 Pages: 10
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1103/PhysRevB.90.245301
 Degree: -

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Title: Physical Review B
  Other : Phys. Rev. B
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: 10 Volume / Issue: 90 (24) Sequence Number: 245301 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: /journals/resource/954925225008