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  Ion fluence dependence of the Si sputtering yield by noble gas ion bombardment

Mutzke, A., & Eckstein, W. (2008). Ion fluence dependence of the Si sputtering yield by noble gas ion bombardment. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266(6), 872-876. doi:10.1016/j.nimb.2008.01.053.

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 Creators:
Mutzke, A.1, Author           
Eckstein, W.2, Author           
Affiliations:
1Stellarator Theory (ST), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856287              
2Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856328              

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Language(s): eng - English
 Dates: 2008
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 322367
DOI: 10.1016/j.nimb.2008.01.053
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Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Source Genre: Journal
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Publ. Info: Elsevier
Pages: - Volume / Issue: 266 (6) Sequence Number: - Start / End Page: 872 - 876 Identifier: -