Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy

Serincan, U.; Kartopu, G.; Guennes, A.; Finstad, T. G.; Turan, R.; Ekinci, Y.; Bayliss, S. C.

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Characterization of Ge nanocrystals embedded in SiO₂ by Raman spectroscopy

Serincan, U., Kartopu, G., Guennes, A., Finstad, T. G., Turan, R., Ekinci, Y., et al. (2004). Characterization of Ge nanocrystals embedded in SiO₂ by Raman spectroscopy. Semiconductor Science and Technology, 19(2), 247-251.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0029-1665-E Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0029-1666-C

Genre: Journal Article

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Creators:
Serincan, U., Author
Kartopu, G., Author
Guennes, A., Author
Finstad, T. G., Author
Turan, R., Author
Ekinci, Y.¹, Author
Bayliss, S. C., Author

Affiliations:
1Emeritus Group Molecular Interactions, Max Planck Institute for Dynamics and Self-Organization, Max Planck Society, ou_2063297

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Language(s): eng - English

Dates: Date issued: 2004-02

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 221530
ISI: 000189377900021

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Title: Semiconductor Science and Technology

Alternative Title : Semicond. Sci. Technol.

Source Genre: Journal

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Pages: - Volume / Issue: 19 (2) Sequence Number: - Start / End Page: 247 - 251 Identifier: ISSN: 0268-1242