Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy

Serincan, U.; Kartopu, G.; Guennes, A.; Finstad, T. G.; Turan, R.; Ekinci, Y.; Bayliss, S. C.

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Characterization of Ge nanocrystals embedded in SiO₂ by Raman spectroscopy

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Ekinci, Y.
Emeritus Group Molecular Interactions, Max Planck Institute for Dynamics and Self-Organization, Max Planck Society;

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Serincan, U., Kartopu, G., Guennes, A., Finstad, T. G., Turan, R., Ekinci, Y., et al. (2004). Characterization of Ge nanocrystals embedded in SiO₂ by Raman spectroscopy. Semiconductor Science and Technology, 19(2), 247-251.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0029-1665-E

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