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  Oxygen adsorbed In/Si(111)-(4x1)/(8x2): surface transport and and impurity-mediated early condensation of an atomic layer electronic crystal

Wippermann, S. M., Edler, F., Miccoli, I., Demuth, S., Pfnür, H. E., Lücke, A., et al. (2015). Oxygen adsorbed In/Si(111)-(4x1)/(8x2): surface transport and and impurity-mediated early condensation of an atomic layer electronic crystal. Poster presented at PSI-K 2015 Conference, San Sebastian, Spain.

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 Creators:
Wippermann, Stefan Martin1, Author           
Edler, Frederik2, Author           
Miccoli, Ilio2, Author           
Demuth, S.3, Author           
Pfnür, Herbert E.2, Author           
Lücke, Andreas4, Author           
Oh, Deok Mahn5, Author           
Yeom, Han Woong6, Author           
Schmidt, Wolf Gero7, Author           
Tegenkamp, C., Author
Affiliations:
1Atomistic Modelling, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863350              
2Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstrasse 2, Hannover, Germany, ou_persistent22              
3Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany, ou_persistent22              
4Lehrstuhl für Theoretische Physik, Universität Paderborn, Paderborn, Germany, ou_persistent22              
5Department of Physics, Pohang University of Science and Technology, Pohang 790-784, South Korea, ou_persistent22              
6Department of Physics, Pohang University of Science and Techonlogy, 77 Cheongam-Ro, Pohang 790-784, South Korea, ou_persistent22              
7Lehrstuhl für Theoretische Physik, Universität Paderborn, 33095 Paderborn, Germany, ou_persistent22              

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Language(s): eng - English
 Dates: 2015-09
 Publication Status: Not specified
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: -
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Title: PSI-K 2015 Conference
Place of Event: San Sebastian, Spain
Start-/End Date: 2015-09-06 - 2015-09-10

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