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  Efficient gating of epitaxial boron nitride monolayers by substrate functionalization

Fedorov, A., Praveen, C. S., Verbitskiy, N. I., Haberer, D., Usachov, D., Vyalikh, D. V., et al. (2015). Efficient gating of epitaxial boron nitride monolayers by substrate functionalization. Physical Review B, 92(12): 125440. doi:10.1103/PhysRevB.92.125440.

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 Creators:
Fedorov, A., Author
Praveen, C. S., Author
Verbitskiy, N. I., Author
Haberer, D., Author
Usachov, D., Author
Vyalikh, D. V., Author
Nefedov, A., Author
Wöll, C., Author
Petaccia, L., Author
Piccinin, S., Author
Sachdev, Hermann1, Author              
Knupfer, M., Author
Büchner, B., Author
Fabris, S., Author
Grüneis, A., Author
Affiliations:
1Dept. Müllen: Synthetic Chemistry, MPI for Polymer Research, Max Planck Society, ou_1800289              

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Language(s): eng - English
 Dates: 2015
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1103/PhysRevB.92.125440
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Affiliations:
Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 92 (12) Sequence Number: 125440 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008