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  Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 MHz repetition rate

Sobierajski, R., Jacyna, I., Dłużewski, P., Klepka, M. T., Klinger, D., Pełka, J. B., et al. (2016). Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 MHz repetition rate. Optics Express, 24(14), 15468-15477. doi:10.1364/OE.24.015468.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002B-1DC3-2 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002B-1DC4-F
Genre: Journal Article

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http://dx.doi.org/10.1364/OE.24.015468 (Publisher version)
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 Creators:
Sobierajski, Ryszard1, Author
Jacyna, Iwanna1, Author
Dłużewski, Piotr1, Author
Klepka, Marcin T.1, Author
Klinger, Dorota1, Author
Pełka, Jerzy B.1, Author
Burian, Tomáš2, Author
Hájková, Věra2, Author
Juha, Libor2, 3, Author
Saksl, Karel2, 4, Author
Vozda, Vojtěch2, Author
Makhotkin, Igor5, Author
Louis, Eric5, Author
Faatz, Bart6, Author
Tiedtke, Kai6, Author
Toleikis, Sven6, Author
Enkisch, Hartmut7, Author
Hermann, Martin7, Author
Strobel, Sebastian7, Author
Loch, Rolf8, Author              
Chalupsky, Jaromir2, Author more..
Affiliations:
1Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland, ou_persistent22              
2Institute of Physics, Czech Academy of Sciences, Na Slovance 2, Prague 8, 182 21, Czech Republic, ou_persistent22              
3Institute of Plasma Physics, Czech Academy of Sciences, Za Slovankou 3, Prague 8, 182 00, Czech Republic, ou_persistent22              
4Institute of Materials Research, Slovak Academy of Sciences, 040 01 Kosice, Slovak Republic, ou_persistent22              
5MESA + Institute for Nanotechnology, University of Twente, The Netherlands, ou_persistent22              
6DESY, Notkestr. 85, 22607 Hamburg, Germany, ou_persistent22              
7Carl Zeiss SMT GmbH, Rudolf-Eber-Straße 2, 73447 Oberkochen, Germany, ou_persistent22              
8Miller Group, Atomically Resolved Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_1938288              

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Free keywords: OCIS codes: (140.2600) Free-electron lasers (FELs); (350.1820) Damage; (340.7480) X-rays, soft x-rays, extreme ultraviolet (EUV); (160.6000) Semiconductor materials; (350.3850) Materials processing
 Abstract: The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The observed surface morphological and structural modifications are formed as a result of sample surface melting. Modifications are threshold dependent on the mean fluence of the incident pulse train, with all threshold values in the range of approximately 36-40 mJ/cm2. Experimental data is supported by a theoretical model described by the heat diffusion equation. The threshold for reaching the melting temperature (45 mJ/cm2) and liquid state (54 mJ/cm2), estimated from this model, is in accordance with experimental values within measurement error. The model indicates a significant role of heat accumulation in surface modification processes.

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Language(s): eng - English
 Dates: 2016-06-032016-04-182016-06-032016-06-292016-07-11
 Publication Status: Published in print
 Pages: 10
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1364/OE.24.015468
 Degree: -

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Title: Optics Express
  Abbreviation : Opt Express
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Washington, DC : Optical Society of America
Pages: - Volume / Issue: 24 (14) Sequence Number: - Start / End Page: 15468 - 15477 Identifier: ISSN: 1094-4087
CoNE: https://pure.mpg.de/cone/journals/resource/954925609918