Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by 
molecular beam epitaxy

Kruse, J. E.; Lymperakis, Liverios; Eftychis, S.; Adikimenakis, A.; Doundoulakis, G.; Tsagaraki, K.; Androulidaki, M.; Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P.; Koukoula, T.; Kehagias, Th.; Komninou, Ph.; Konstantinidis, G.; Georgakilas, A.

doi:10.1063/1.4953594

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Selective-area growth of GaN nanowires on SiO₂-masked Si (111) substrates by molecular beam epitaxy

Kruse, J. E., Lymperakis, L., Eftychis, S., Adikimenakis, A., Doundoulakis, G., Tsagaraki, K., et al. (2016). Selective-area growth of GaN nanowires on SiO₂-masked Si (111) substrates by molecular beam epitaxy. Journal of Applied Physics, 119(22): 224305. doi:10.1063/1.4953594.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-23AE-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-23AF-9

Genre: Journal Article

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Creators:
Kruse, J. E.^{1, 2}, Author
Lymperakis, Liverios³, Author
Eftychis, S.¹, Author
Adikimenakis, A.², Author
Doundoulakis, G.^{1, 2}, Author
Tsagaraki, K.², Author
Androulidaki, M.², Author
Olziersky, A.⁴, Author
Dimitrakis, P.⁴, Author
Ioannou-Sougleridis, V.⁴, Author
Normand, P.⁴, Author
Koukoula, T.⁵, Author
Kehagias, Th.⁵, Author
Komninou, Ph.⁵, Author
Konstantinidis, G.², Author
Georgakilas, A.¹, Author

Affiliations:
1Univ Crete, Dept Phys, POB 2208, Iraklion 71003, Greece, ou_persistent22
2Fdn Res & Technol Hellas, Inst Elect Struct & Laser, N Plastira 100, Iraklion 70013, Greece, ou_persistent22
3Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344
4NCSR Demokritos, Inst Nanosci & Nanotechnol, Patriarchou Grigoriou & Neapoleos 27, Athens 15310, Greece, ou_persistent22
5Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece, ou_persistent22

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Language(s): eng - English

Dates: Date issued: 2016-06-14

Publication Status: Issued

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Rev. Type: Peer

Identifiers: DOI: 10.1063/1.4953594

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Title: Journal of Applied Physics

Abbreviation : J. Appl. Phys.

Source Genre: Journal

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Publ. Info: New York, NY : AIP Publishing

Pages: - Volume / Issue: 119 (22) Sequence Number: 224305 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880