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  Patching laser-reduced graphene oxide with carbon nanodots

Strauß, V., Muni, M., Borenstein, A., Badamdorj, B., Heil, T., Kowal, M. D., et al. (2019). Patching laser-reduced graphene oxide with carbon nanodots. Nanoscale, 11(26), 12712-12719. doi:10.1039/C9NR01719D.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0003-E75D-1 Version Permalink: http://hdl.handle.net/21.11116/0000-0005-5F67-E
Genre: Journal Article

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 Creators:
Strauß, Volker1, Author              
Muni, Mit, Author
Borenstein, Arie, Author
Badamdorj, Bolortuya2, Author              
Heil, Tobias2, Author              
Kowal, Matthew D., Author
Kaner, Richard, Author
Affiliations:
1Volker Strauß, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_3025555              
2Nadezda V. Tarakina, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_2522693              

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 Abstract: Three-dimensional graphenes are versatile materials for a range of electronic applications and considered among the most promising candidates for electrodes in future electric double layer capacitors (EDLCs) as they are expected to outperform commercially used activated carbon. Parameters such as electrical conductivity and active surface area are critical to the final device performance. By adding carbon nanodots to graphene oxide in the starting material for our standard laser-assisted reduction process, the structural integrity (i.e. lower defect density) of the final 3D-graphene is improved. As a result, the active surface area in the hybrid starting materials was increased by 130% and the electrical conductivity enhanced by nearly an order of magnitude compared to pure laser-reduced graphene oxide. These improved material parameters lead to enhanced device performance of the EDLC electrodes. The frequency response, i.e. the minimum phase angle and the relaxation time, were significantly improved from −82.2° and 128 ms to −84.3° and 7.6 ms, respectively. For the same devices the specific gravimetric device capacitance was increased from 110 to a maximum value of 214 F g−1 at a scan rate of 10 mV s−1.

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Language(s): eng - English
 Dates: 2019-06-202019
 Publication Status: Published in print
 Pages: -
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 Identifiers: DOI: 10.1039/C9NR01719D
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Title: Nanoscale
  Abbreviation : Nanoscale
Source Genre: Journal
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Publ. Info: Cambridge, UK : Royal Society of Chemistry
Pages: - Volume / Issue: 11 (26) Sequence Number: - Start / End Page: 12712 - 12719 Identifier: ISSN: 2040-3364