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  Microstructural control of the transport properties of β-FeSe films grown by sputtering

Ale Crivillero, M. V., Amigó, M. L., Haberkorn, N., Nieva, G., & Guimpel, J. (2019). Microstructural control of the transport properties of β-FeSe films grown by sputtering. Journal of Applied Physics, 126: 115303, pp. 1-8. doi:10.1063/1.5094131.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0004-C799-F Version Permalink: http://hdl.handle.net/21.11116/0000-0004-C79B-D
Genre: Journal Article
Alternative Title : Journal of Applied Physics

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 Creators:
Ale Crivillero, M. V.1, Author              
Amigó, M. L.2, Author
Haberkorn, N.2, Author
Nieva, G.2, Author
Guimpel, J.2, Author
Affiliations:
1Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863445              
2External Organizations, ou_persistent22              

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Free keywords: Electronic structure, Iron compounds, Selenium compounds, Strontium compounds, Textures, Thick films, Thin films, Titanium compounds, Transport properties, Epitaxial thin films, Growth parameters, Hall coefficient measurements, Lattice distortions, Low anisotropy, Microstructural control, Substrate temperature, Superconductor insulator transitions, Morphology
 Abstract: We have investigated the correlation between structural and transport properties in sputtered β-FeSe films grown onto SrTiO 3 (100). The growth parameters, such as substrate temperature and thickness, have been varied in order to explore different regimes. In the limit of textured thick films, we found promising features like an enhanced T c ∼ 12 K, a relatively high H c 2, and a low anisotropy. By performing magnetoresistance and Hall coefficient measurements, we investigate the influence of the disorder associated with the textured morphology on some features attributed to subtle details of the multiband electronic structure of β-FeSe. Regarding the superconductor-insulator transition induced by reducing the thickness, we found a nontrivial evolution of the structural properties and morphology associated with a strained initial growth and the coalescence of grains. Finally, we discuss the origin of the insulating behavior in high-quality stressed epitaxial thin films. We found that a lattice distortion, described by Poisson's coefficient associated with the lattice parameters a and c, may play a key role. © 2019 Author(s).

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Language(s): eng - English
 Dates: 2019-09-192019-09-19
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: DOI: 10.1063/1.5094131
 Degree: -

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Title: Journal of Applied Physics
  Abbreviation : J. Appl. Phys.
Source Genre: Journal
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Publ. Info: New York, NY : AIP Publishing
Pages: - Volume / Issue: 126 Sequence Number: 115303 Start / End Page: 1 - 8 Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880