Normally-Off Operation of Lateral Field-Effect Transistors Fabricated from 
Ultrapure GaN/AlGaN Heterostructures

Schmult, Stefan; Wirth, Steffen; Solovyev, Victor V.; Hentschel, Rico; Wachowiak, Andre; Scheinert, Tobias; Grosser, Andreas; Kukushkin, Igor V.; Mikolajick, Thomas

doi:10.1002/pssa.201900732

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Normally-Off Operation of Lateral Field-Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures

Schmult, S., Wirth, S., Solovyev, V. V., Hentschel, R., Wachowiak, A., Scheinert, T., et al. (2020). Normally-Off Operation of Lateral Field-Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures. Physica Status Solidi A, 1900732, pp. 1-5. doi:10.1002/pssa.201900732.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0005-8148-8 Version Permalink: https://hdl.handle.net/21.11116/0000-0005-814B-5

Genre: Journal Article

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Creators:
Schmult, Stefan¹, Author
Wirth, Steffen², Author
Solovyev, Victor V.¹, Author
Hentschel, Rico¹, Author
Wachowiak, Andre¹, Author
Scheinert, Tobias¹, Author
Grosser, Andreas¹, Author
Kukushkin, Igor V.¹, Author
Mikolajick, Thomas¹, Author

Affiliations:
1External Organizations, ou_persistent22
2Steffen Wirth, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863460

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Abstract: The presence of a 2D electron gas (2DEG) in GaN/AlxGa1-xN heterostructures with low aluminum mole fraction is found to depend on the residual background impurity concentration in the GaN/AlGaN layer stack. At a residual donor level of 2 x 10(16) cm(-3), a 2DEG is absent at 300 K in dark environment. Such a 2DEG can be generated at the GaN/AlGaN interface either by illumination with ultraviolet light or by applying an electrostatic potential. The latter results in inherently normally-off switching characteristics of lateral field-effect transistors.

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Language(s): eng - English

Dates: Published Online: 2020-01-15Date issued: 2020-01-15

Publication Status: Issued

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Identifiers: ISI: 000505286700001
DOI: 10.1002/pssa.201900732

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Title: Physica Status Solidi A

Other : Physica Status Solidi A: Applications and Materials Science

Abbreviation : Phys. Status Solidi (a)

Source Genre: Journal

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Publ. Info: Weinheim : Wiley-VCH

Pages: - Volume / Issue: - Sequence Number: 1900732 Start / End Page: 1 - 5 Identifier: ISSN: 1862-6300
CoNE: https://pure.mpg.de/cone/journals/resource/1862630