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  Epitaxial growth and interfacial structure of Sn on Si(1 1 1)-(7×7)

Roldan Cuenya, B., Doi, M., & Keune, W. K. (2002). Epitaxial growth and interfacial structure of Sn on Si(1 1 1)-(7×7). Surface Science, 506(1-2), 33-46. doi:10.1016/S0039-6028(01)01662-4.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0006-EC29-3 Version Permalink: https://hdl.handle.net/21.11116/0000-0006-EC2A-2
Genre: Journal Article

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 Creators:
Roldan Cuenya, Beatriz1, Author           
Doi, M.1, Author
Keune, Werner K.1, Author
Affiliations:
1Department of Physics, University of Duisburg-Essen, ou_persistent22              

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 Abstract: Room temperature stabilization of up to 3.5 ML epitaxial metastable α-Sn at the Si(1 1 1)-(7×7) surface is reported. The α-Sn layers remain stabilized at the interface even after the deposition of thick Sn layers that undergo the α-Sn→β-Sn transformation. Additionally, a small decrease in the s-electron density at the 119Sn nucleus is found for submonolayer of Sn at the Sn/Si(1 1 1)-(7×7) interface. The epitaxial relationship between thick β-Sn layers on Si(1 1 1) is also shown. The results were obtained by low and high energy electron diffraction and 119Sn conversion electron Mössbauer spectroscopy.

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Language(s): eng - English
 Dates: 2001-07-192001-10-022001-11-052002-05-10
 Publication Status: Issued
 Pages: 14
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1016/S0039-6028(01)01662-4
 Degree: -

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Title: Surface Science
  Abbreviation : Surf. Sci.
Source Genre: Journal
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Publ. Info: Amsterdam : Elsevier
Pages: 14 Volume / Issue: 506 (1-2) Sequence Number: - Start / End Page: 33 - 46 Identifier: ISSN: 0039-6028
CoNE: https://pure.mpg.de/cone/journals/resource/0039-6028