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  Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device

Schnitzspan, L., Tries, A., & Klaeui, M. (2020). Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device. Journal of Applied Physics, 128(12): 124302. doi:10.1063/5.0016471.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0007-468C-D Version Permalink: http://hdl.handle.net/21.11116/0000-0007-468D-C
Genre: Journal Article

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 Creators:
Schnitzspan, Leo1, Author
Tries, Alexander1, 2, Author              
Klaeui, Mathias1, Author
Affiliations:
1Johannes Gutenberg Univ Mainz, Inst Phys, Mainz, Germany, ou_persistent22              
2Dept. Bonn: Molecular Spectroscopy, MPI for Polymer Research, Max Planck Society, ou_1800285              

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Language(s): eng - English
 Dates: 2020-09-242020-09-28
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1063/5.0016471
 Degree: -

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Title: Journal of Applied Physics
  Abbreviation : J. Appl. Phys.
Source Genre: Journal
 Creator(s):
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Publ. Info: New York, NY : AIP Publishing
Pages: - Volume / Issue: 128 (12) Sequence Number: 124302 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880