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  Backside-processed III-V-on-silicon discrete mode laser

Thiessen, T., Fonseca, J. D., Mak, J. C. C., Zammar, G. E., Jany, C., Szelag, B., et al. (2019). Backside-processed III-V-on-silicon discrete mode laser. In CLEO: Science and Innovations 2019. doi:10.1364/CLEO_AT.2019.JTh5A.1.

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CLEO_AT.2019.JTh5A.1 (Publisher version), 79KB
 
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https://doi.org/10.1364/CLEO_AT.2019.JTh5A.1 (Publisher version)
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 Creators:
Thiessen, Torrey1, Author
Fonseca, Jérémy Da1, Author
Mak, Jason C. C.1, Author
Zammar, Georgio El1, Author
Jany, Christophe1, Author
Szelag, Bertrand1, Author
Poon, Joyce K. S.2, Author           
Menezo, Sylvie1, Author
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1External Organizations, ou_persistent22              
2Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287471              

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 Abstract: We demonstrate the first backside-processed hybrid silicon discrete mode laser. It operates in the O-band with a total waveguide-coupled output power >43 mW, 850 kHz linewidth, and a side mode suppression ratio of 60 dB.

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Language(s): eng - English
 Dates: 2019-05-05
 Publication Status: Published online
 Pages: 2
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 Identifiers: DOI: 10.1364/CLEO_AT.2019.JTh5A.1
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Title: Conference on Lasers and Electro-Optics (CLEO)
Place of Event: San Jose, California United States
Start-/End Date: 2019-05-05 - 2019-05-10

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Title: CLEO: Science and Innovations 2019
Source Genre: Proceedings
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Pages: - Volume / Issue: - Sequence Number: JTh5A.1 Start / End Page: - Identifier: ISBN: 978-1-943580-57-6