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  Photochemical routes to silicon epitaxy

Dippel, O., Wright, S., & Hasselbrink, E. (1997). Photochemical routes to silicon epitaxy. Journal of Vacuum Science and Technology A, 15(3), 1135-1139. doi:10.1116/1.580443.

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1.580443.pdf (Publisher version), 473KB
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1.580443.pdf
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Copyright Date:
1997
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AVS
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 Creators:
Dippel, Olaf1, Author           
Wright, S.2, Author           
Hasselbrink, Eckart1, Author           
Affiliations:
1Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              
2Fritz Haber Institute, Max Planck Society, ou_24021              

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 Abstract: The photochemistry of Si2H6 adsorbed on a hydrogen terminated silicon surface and the subsequentreactions of the photolysis products were investigated using high resolution electron energy lossspectroscopy and by measuring time-of-flight distributions with a mass spectrometer. The crackingpattern of the products ejected directly into the gas phase without colliding with either the surfaceor other molecules indicates that the primary photolysis channels yield mostly fragments thatcontain one silicon atom. It is likely that silicon is added to the surface by insertion of SiH2 radicalsinto Si–H bonds at the surface but there is little evidence for reactions that remove excess hydrogenfrom the surface at 110 K

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Language(s): eng - English
 Dates: 1996-10-141997-02-241997-05
 Publication Status: Issued
 Pages: 5
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1116/1.580443
 Degree: -

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Title: Journal of Vacuum Science and Technology A
  Other : J. Vac. Sci. Technol. A
Source Genre: Journal
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Publ. Info: New York : Published by AVS through the American Institute of Physics
Pages: 5 Volume / Issue: 15 (3) Sequence Number: - Start / End Page: 1135 - 1139 Identifier: ISSN: 0734-2101
CoNE: https://pure.mpg.de/cone/journals/resource/954928495416_2