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  Observation of optically addressable nonvolatile memory in VO2 at room temperature

Jung, Y., Jeong, J., Qu, Z., Cui, B., Khanda, A., Parkin, S. S. P., et al. (2021). Observation of optically addressable nonvolatile memory in VO2 at room temperature. Advanced Electronic Materials, 2001142. doi:10.1002/aelm.202001142.

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https://doi.org/10.1002/aelm.202001142 (Publisher version)
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 Creators:
Jung, Youngho1, Author           
Jeong, Junho1, Author
Qu, Zhongnan2, Author
Cui, Bin3, Author
Khanda, Ankita2, Author
Parkin, Stuart S. P.3, Author                 
Poon, Joyce K. S.1, Author                 
Affiliations:
1Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287471              
2External Organizations, ou_persistent22              
3Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287476              

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 Abstract: Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room temperature, and nonvolatile memory has required non-ambient surroundings (e.g., elevated temperatures, electrolytes) and long write times. For the first time, here, the authors report the observation of optically addressable nonvolatile memory in VO2 at room temperature with a readout by voltage oscillations. The read and write times have to be kept shorter than about 150 µs. The writing of the memory and onset of the voltage oscillations have a minimum optical power threshold. Although the physical mechanisms underlying this memory effect require further investigations, this discovery illustrates the potential of VO2 for new computing devices and architectures, such as artificial neurons and oscillatory neural networks.

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 Dates: 2021-06-04
 Publication Status: Published online
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 Identifiers: DOI: 10.1002/aelm.202001142
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Grant ID : RGPIN-2018-06491
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Funding organization : Natural Sciences and Engineering Research Council of Canada

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Title: Advanced Electronic Materials
  Abbreviation : Adv. Electron. Mater.
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: - Volume / Issue: - Sequence Number: 2001142 Start / End Page: - Identifier: ISSN: 2199-160X
CoNE: https://pure.mpg.de/cone/journals/resource/2199-160X