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  A Simplified Method for Patterning Graphene on Dielectric Layers

Røst, H. I., Reed, B. P., Strand, F. S., Durk, J. A., Evans, A., Grubišić-Čabo, A., et al. (2021). A Simplified Method for Patterning Graphene on Dielectric Layers. ACS Applied Materials and Interfaces, 13(31), 37510-37516. doi:10.1021/acsami.1c09987.

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Datensatz-Permalink: https://hdl.handle.net/21.11116/0000-0008-F81A-4 Versions-Permalink: https://hdl.handle.net/21.11116/0000-0009-5C55-1
Genre: Zeitschriftenartikel

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acsami.1c09987-1.pdf (Verlagsversion), 6MB
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https://hdl.handle.net/21.11116/0000-0009-1B7C-F
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acsami.1c09987-1.pdf
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Copyright Datum:
2021
Copyright Info:
The Authors
Lizenz:
https://creativecommons.org/licenses/by/4.0/

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 Urheber:
Røst, Håkon I.1, Autor
Reed, Benjamen P.2, Autor
Strand, Frode S.1, Autor
Durk, Joseph A.2, Autor
Evans, Andrew2, Autor
Grubišić-Čabo, Antonija3, Autor
Wan, Gary4, Autor
Cattelan, Mattia5, Autor
Prieto, Mauricio6, Autor           
Gottlob, Daniel M.6, Autor           
Tanase, Liviu Cristian6, Autor           
Caldas, Lucas de Souza6, Autor           
Schmidt, Thomas6, Autor           
Tadich, Anton7, Autor
Cowie, Bruce C. C.7, Autor
Chellappan, Rajesh Kumar1, Autor
Wells, Justin W.1, Autor
Cooil, Simon P.2, Autor
Affiliations:
1Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway, ou_persistent22              
2Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom, ou_persistent22              
3School of Physics & Astronomy, Monash University, Clayton, Victoria 3800, Australia, ou_persistent22              
4School of Physics, HH Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom, ou_persistent22              
5School of Chemistry, University of Bristol, Bristol BS8 1TS, United Kingdom, ou_persistent22              
6Interface Science, Fritz Haber Institute, Max Planck Society, ou_2461712              
7Australian Synchrotron, Clayton, Victoria 3168, Australia, ou_persistent22              

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 Zusammenfassung: The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600–700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.

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Sprache(n): eng - English
 Datum: 2021-05-292021-07-132021-07-302021-08-11
 Publikationsstatus: Erschienen
 Seiten: 7
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Identifikatoren: DOI: 10.1021/acsami.1c09987
 Art des Abschluß: -

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Titel: ACS Applied Materials and Interfaces
  Andere : ACS Applied Materials & Interfaces
  Kurztitel : ACS Appl. Mater. Interfaces
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: Washington, DC : American Chemical Society
Seiten: 7 Band / Heft: 13 (31) Artikelnummer: - Start- / Endseite: 37510 - 37516 Identifikator: ISSN: 1944-8244
CoNE: https://pure.mpg.de/cone/journals/resource/1944-8244