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Schlagwörter:
TOTAL-ENERGY CALCULATIONS; DISCOVERY; INSULATORPhysics;
Zusammenfassung:
Dirac semimetals are classified into different phases based on the types of Dirac fermions. Tuning the transition among different types of Dirac fermions in one system remains a challenge. Recently, KMgBi was predicted to be located at a critical state in which various types of Dirac fermions can be induced owing to the existence of a flatband. Here, we carried out systematic studies on the electronic structure of KMgBi single crystals by combining angle-resolve photoemission spectroscopy and scanning tunneling microscopy/spectroscopy. The flatband was clearly observed near the Fermi level. We also revealed a small bandgap of ∼20 meV between the flatband and the conduction band. These results demonstrate the critical states of KMgBi that transition among various types of Dirac fermions can be tuned in one system.
