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  Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning

Neuhold, G., Chassé, T., Paggel, J., & Horn, K. (1996). Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning. Physical Review B, 54(12), 8623-8626. doi:10.1103/PhysRevB.54.8623.

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PhysRevB.54.8623.pdf (Publisher version), 83KB
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PhysRevB.54.8623.pdf
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1996
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APS
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 Creators:
Neuhold, Georg1, Author           
Chassé, T.2, Author
Paggel, Jens1, Author           
Horn, Karsten1, Author           
Affiliations:
1Fritz Haber Institute, Max Planck Society, ou_24021              
2Institut für Physikalische und Theoretische Chemie der Universität Leipzig, D-04103 Leipzig, Germany, ou_persistent22              

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 Abstract: The deposition of submonolayer quantities of Cs onto GaP(110) causes strong photoemission features in the region of the semiconductor fundamental band gap. This observation is interpreted in terms of emission from a hybrid state caused by the interaction of the Cs 6s level with the unoccupied dangling-bond state. This hybrid state has long been postulated in descriptions of the metal-semiconductor surface bond, and is responsible for the pinning of the Fermi level. The absence of dispersion in the state suggests that Cs/GaP(110) represents a realization of a Mott-Hubbard insulator, by comparison with results from other alkali-metal/compound-semiconductor systems.

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Language(s): eng - English
 Dates: 1996-05-241996-09-15
 Publication Status: Issued
 Pages: 4
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevB.54.8623
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: 4 Volume / Issue: 54 (12) Sequence Number: - Start / End Page: 8623 - 8626 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008