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Abstract:
Valence switching at Eu‐Si interfaces is demonstrated by resonant photoemission during repeated oxidation‐reduction cycles performed by room‐temperature O2 exposure and mild heating. The Eu2+ ↔ Eu3+ transitions are accompanied by Fermi level switching associated with changes in the stoichiometry of the surface heterostructure. The ability to cycle between two well‐defined magnetic states at a surface may be attractive in technological applications.
