Reversible Eu2+ ↔ Eu3+ transitions at Eu‐Si interfaces

Henle, W. A.; Ramsey, M. G.; Netzer, F. P.; Horn, Karsten

doi:10.1063/1.105139

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Reversible Eu²⁺ ↔ Eu³⁺ transitions at Eu‐Si interfaces

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Horn, Karsten
Fritz Haber Institute, Max Planck Society;

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Citation

Henle, W. A., Ramsey, M. G., Netzer, F. P., & Horn, K. (1991). Reversible Eu²⁺ ↔ Eu³⁺ transitions at Eu‐Si interfaces. Applied Physics Letters, 58(15), 1605-1607. doi:10.1063/1.105139.

Cite as: https://hdl.handle.net/21.11116/0000-0009-F5D3-4

Abstract

Valence switching at Eu‐Si interfaces is demonstrated by resonant photoemission during repeated oxidation‐reduction cycles performed by room‐temperature O₂ exposure and mild heating. The Eu²⁺ ↔ Eu³⁺ transitions are accompanied by Fermi level switching associated with changes in the stoichiometry of the surface heterostructure. The ability to cycle between two well‐defined magnetic states at a surface may be attractive in technological applications.