Self-assembled GaAs/AlGaAs quantum dots by molecular beam epitaxy and in situ 
AsBr3 etching

Rastelli, A.; Songmuang, R.; Schmidt, O. G.

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Self-assembled GaAs/AlGaAs quantum dots by molecular beam epitaxy and in situ AsBr₃ etching

Rastelli, A., Songmuang, R., & Schmidt, O. G. (2004). Self-assembled GaAs/AlGaAs quantum dots by molecular beam epitaxy and in situ AsBr₃ etching. Physica E, 23, 384-389.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-F5FD-1 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-F5FE-0

Genre: Journal Article

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Creators:
Rastelli, A.^{1, 2}, Author
Songmuang, R.¹, Author
Schmidt, O. G.^{1, 2, 3, 4}, Author

Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501
2Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481
3Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499
4Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504

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Language(s): eng - English

Dates: Date issued: 2004

Publication Status: Issued

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Identifiers: eDoc: 199171

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Title: Physica E

Source Genre: Journal

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Pages: - Volume / Issue: 23 Sequence Number: - Start / End Page: 384 - 389 Identifier: -