Shape, facet evolution and photoluminescence of Ge islands capped with Si at 
different temperatures

Stoffel, M.; Kar, G. S.; Denker, U.; Rastelli, A.; Sigg, H.; Schmidt, O. G.

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Shape, facet evolution and photoluminescence of Ge islands capped with Si at different temperatures

Stoffel, M., Kar, G. S., Denker, U., Rastelli, A., Sigg, H., & Schmidt, O. G. (2004). Shape, facet evolution and photoluminescence of Ge islands capped with Si at different temperatures. Physica E, 23, 421-427.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-F5F5-9 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-F5F6-8

Genre: Journal Article

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Creators:
Stoffel, M.¹, Author
Kar, G. S.², Author
Denker, U.^{1, 2, 3}, Author
Rastelli, A.^{1, 2}, Author
Sigg, H.³, Author
Schmidt, O. G.^{1, 2, 3, 4}, Author

Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481
2Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501
3Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504
4Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499

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Language(s): eng - English

Dates: Date issued: 2004

Publication Status: Issued

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Identifiers: eDoc: 199173

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Title: Physica E

Source Genre: Journal

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Pages: - Volume / Issue: 23 Sequence Number: - Start / End Page: 421 - 427 Identifier: -