Shape, facet evolution and photoluminescence of Ge islands capped with Si at 
different temperatures

Stoffel, M.; Kar, G. S.; Denker, U.; Rastelli, A.; Sigg, H.; Schmidt, O. G.

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Shape, facet evolution and photoluminescence of Ge islands capped with Si at different temperatures

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Stoffel, M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Kar, G. S.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Denker, U.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Rastelli, A.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Sigg, H.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Stoffel, M., Kar, G. S., Denker, U., Rastelli, A., Sigg, H., & Schmidt, O. G. (2004). Shape, facet evolution and photoluminescence of Ge islands capped with Si at different temperatures. Physica E, 23, 421-427.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F5F5-9

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