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  Shape, facet evolution and photoluminescence of Ge islands capped with Si at different temperatures

Stoffel, M., Kar, G. S., Denker, U., Rastelli, A., Sigg, H., & Schmidt, O. G. (2004). Shape, facet evolution and photoluminescence of Ge islands capped with Si at different temperatures. Physica E, 23, 421-427.

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 Creators:
Stoffel, M.1, Author           
Kar, G. S.2, Author           
Denker, U.1, 2, 3, Author           
Rastelli, A.1, 2, Author           
Sigg, H.3, Author           
Schmidt, O. G.1, 2, 3, 4, Author           
Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              
2Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
3Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              
4Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499              

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Language(s): eng - English
 Dates: 2004
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 199173
 Degree: -

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Title: Physica E
Source Genre: Journal
 Creator(s):
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Publ. Info: -
Pages: - Volume / Issue: 23 Sequence Number: - Start / End Page: 421 - 427 Identifier: -