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  Interface of directly bonded InP wafers for vertical couplers

Jin-Phillipp, N. Y., Liu, B., Bowers, J. E., Hu, E. L., Kelsch, M., Thomas, J., et al. (2002). Interface of directly bonded InP wafers for vertical couplers. Applied Physics Letters, 80(8), 1346-1348.

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 Creators:
Jin-Phillipp, N. Y.1, Author           
Liu, B., Author
Bowers, J. E., Author
Hu, E. L., Author
Kelsch, M.2, Author           
Thomas, J., Author
Rühle, M., Author
Affiliations:
1Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370483              
2Scientific Facility Stuttgart Center for Electron Microscopy (Peter A. van Aken), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370493              

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 Abstract: Vertical directional couplers fabricated using direct wafer
bonding have demonstrated a very short coupling length and a
small excess optical loss introduced by the bonded interface
layer. The structure of the interface of directly bonded InP
wafers is investigated. Dislocations at the interface are found
to accommodate the tilt misorientation between the two wafers
without introducing extra misfit. Body-centered-tetragonal In
inclusions of a size of few nanometers are identified at the
interface. The excess optical loss of the coupler based on
directly bonded InP wafers due to the formation of these
inclusions may be eliminated by using lower temperature and a
phosphor atmosphere for direct bonding. (C) 2002 American
Institute of Physics.

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Language(s): eng - English
 Dates: 2002
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 7391
ISI: 000174009800010
 Degree: -

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Title: Applied Physics Letters
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 80 (8) Sequence Number: - Start / End Page: 1346 - 1348 Identifier: ISSN: 0003-6951