High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN 
substrates

Frayssinet, E.; Knap, W.; Lorenzini, P.; Grandjean, N.; Massies, J.; Skierbiszewski, C.; Suski, T.; Grzegory, I.; Porowski, S.; Simin, G.; Hu, X.; Khan, M. A.; Shur, M. S.; Gaska, R.; Maude, D.

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High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

Frayssinet, E., Knap, W., Lorenzini, P., Grandjean, N., Massies, J., Skierbiszewski, C., et al. (2000). High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates. Applied Physics Letters, 77, 2551-2553.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-F313-A Version Permalink: https://hdl.handle.net/21.11116/0000-000E-F314-9

Genre: Journal Article

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Frayssinet, E., Author
Knap, W., Author
Lorenzini, P., Author
Grandjean, N., Author
Massies, J., Author
Skierbiszewski, C., Author
Suski, T., Author
Grzegory, I., Author
Porowski, S., Author
Simin, G., Author
Hu, X., Author
Khan, M. A., Author
Shur, M. S., Author
Gaska, R., Author
Maude, D.¹, Author

Affiliations:
1High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3371774

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Dates: Date issued: 2000

Publication Status: Issued

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Identifiers: eDoc: 181459
Other: 27037

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Title: Applied Physics Letters

Source Genre: Journal

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Pages: - Volume / Issue: 77 Sequence Number: - Start / End Page: 2551 - 2553 Identifier: -