High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN 
substrates

Frayssinet, E.; Knap, W.; Lorenzini, P.; Grandjean, N.; Massies, J.; Skierbiszewski, C.; Suski, T.; Grzegory, I.; Porowski, S.; Simin, G.; Hu, X.; Khan, M. A.; Shur, M. S.; Gaska, R.; Maude, D.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

MPS-Authors

/persons/resource/persons280292

Maude, D.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Frayssinet, E., Knap, W., Lorenzini, P., Grandjean, N., Massies, J., Skierbiszewski, C., et al. (2000). High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates. Applied Physics Letters, 77, 2551-2553.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F313-A

Abstract

There is no abstract available