Correlating elemental compositions and charge carrier profiles in ultra-pure 
GaN/AlGaN stacks grown by molecular beam epitaxy

Schmult, Stefan; Appelt, Pascal; Silva, Claudia; Wirth, Steffen; Wachowiak, Andre; Großer, Andreas; Mikolajick, Thomas

doi:10.1116/6.0002652

Local TagsRelease HistoryDetailsSummary

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Schmult, S., Appelt, P., Silva, C., Wirth, S., Wachowiak, A., Großer, A., et al. (2023). Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 41(4): 042702, pp. 1-6. doi:10.1116/6.0002652.

Item is Released

show all hide all

Basic

show hide

Item Permalink: https://hdl.handle.net/21.11116/0000-000D-4045-D Version Permalink: https://hdl.handle.net/21.11116/0000-000D-4048-A

Genre: Journal Article

Files

show Files

Locators

show

Creators

show

hide

Creators:
Schmult, Stefan¹, Author
Appelt, Pascal¹, Author
Silva, Claudia¹, Author
Wirth, Steffen², Author
Wachowiak, Andre¹, Author
Großer, Andreas¹, Author
Mikolajick, Thomas¹, Author

Affiliations:
1External Organizations, ou_persistent22
2Steffen Wirth, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863460

Content

show

hide

Free keywords: -

Abstract: Inconsistencies in the concentrations of unintentional donor impurities and free charge carriers in GaN/AlGaN layer stacks hosting a two-dimensional electron gas (2DEG) can be attributed to the measurement procedure and solely depend on the way in which the free charge carrier concentration is extracted. Particularly, when the 2DEG acts as the bottom electrode in capacitance versus voltage measurements, unphysically low concentrations of free charges are calculated. This originates from the depletion of the 2DEG and the accompanying disappearance of the bottom electrode. It is shown that, for the case of a defined (non-vanishing) bottom electrode, the levels of donor impurities and resulting free charges consistently match. © 2023 Author(s).

Details

show

hide

Language(s): eng - English

Dates: Published Online: 2023-05-12Date issued: 2023-05-12

Publication Status: Issued

Pages: -

Publishing info: -

Table of Contents: -

Rev. Type: -

Identifiers: DOI: 10.1116/6.0002652
BibTex Citekey: Schmult2023

Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show

hide

Title: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Source Genre: Journal

Creator(s):

Affiliations:

Publ. Info: AVS Science and Technology Society

Pages: - Volume / Issue: 41 (4) Sequence Number: 042702 Start / End Page: 1 - 6 Identifier: ISSN: 07342101