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  Laser‐assisted nitridation of GaAs: Mechanisms

Zhu, X., Wolf, M., & White, J. M. (1993). Laser‐assisted nitridation of GaAs: Mechanisms. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 11(4), 838-840. doi:10.1116/1.578314.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-A6D0-B Version Permalink: https://hdl.handle.net/21.11116/0000-000E-A6D3-8
Genre: Journal Article

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838_1_online.pdf (Publisher version), 934KB
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https://hdl.handle.net/21.11116/0000-000E-A6D2-9
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838_1_online.pdf
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Copyright Date:
1993
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 Creators:
Zhu, X.‐Y.1, Author
Wolf, Martin2, Author                 
White, J. M.1, Author
Affiliations:
1Department of Chemistry and Biochemistry, Center for Materials Chemistry, University of Texas, Austin, Texas 78712, ou_persistent22              
2Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              

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 Abstract: A nitride layer can be formed at low temperatures on GaAs(100) by simultaneous exposure to ammonia and UV photons in an ultrahigh vacuum environment. This process is a result of nonthermal photodissociation of adsorbed ammonia, initiated both by direct photon absorption and by attachment of hot substrate carriers. The nitride layer consists of a mixture of thermally stable GaN and volatile AsN; the latter desorbs below 800 K.

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Language(s): eng - English
 Dates: 1992-09-211993-03-151993-07-01
 Publication Status: Issued
 Pages: 3
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1116/1.578314
 Degree: -

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Title: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
  Other : J. Vac. Sci. Technol. A: Vac. Surf. Films
Source Genre: Journal
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Publ. Info: New York : Published by AVS through the American Institute of Physics
Pages: 3 Volume / Issue: 11 (4) Sequence Number: - Start / End Page: 838 - 840 Identifier: ISSN: 0734-2101
CoNE: https://pure.mpg.de/cone/journals/resource/954928495416_2