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キーワード:
Charge density waves; Charge transfer; Tantalum compounds; Tungsten compounds; Charge transfer doping; Charge-density-wave phasis; Induced charges; Induced holes; Laser induced; Phase transition temperatures; Photo-induced; Photodoping; Time-resolved; Ultra-fast spectroscopies; Charge density
要旨:
Controlling collective electronic states hold great promise for development of innovative devices. Here, we experimentally detect the modification of the charge density wave (CDW) phase transition within a 1T-TaS2 layer in a WS2/1T-TaS2 heterostructure using time-resolved ultrafast spectroscopy. Laser-induced charge transfer doping strongly suppresses the commensurate CDW phase, which results in a significant decrease in both the phase transition temperature (T c) and phase transition stiffness. We interpret the phenomenon that photo-induced hole doping, when surpassing a critical threshold value of ∼ 1018 cm−3, sharply decreases the phase transition energy barrier. Our results provide new insights into controlling the CDW phase transition, paving the way for optical-controlled novel devices based on CDW materials. © 2024 Chinese Physical Society and IOP Publishing Ltd.
