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  Thermal decomposition of ethylene on Si(1 1 1): Formation of the Si(1 1 1)√3x √3 carbon structure

Kim, J. W., Kampen, T. U., Horn, K., & Jung, M.-C. (2007). Thermal decomposition of ethylene on Si(1 1 1): Formation of the Si(1 1 1)√3x √3 carbon structure. Surface Science, 601(3), 694-698. doi:10.1016/j.susc.2006.10.033.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-019D-1 Version Permalink: https://hdl.handle.net/21.11116/0000-0006-6B84-D
Genre: Journal Article

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 Creators:
Kim, Jeong Won, Author
Kampen, Thorsten U.1, Author           
Horn, Karsten1, Author           
Jung, M.-C., Author
Affiliations:
1Molecular Physics, Fritz Haber Institute, Max Planck Society, ou_634545              

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Free keywords: Carbon; Silicon; Synchrotron radiation photoelectron spectroscopy; Surface chemical reaction; Ethylene
 Abstract: Adsorption and thermal decomposition of ethylene on Si(1 1 1) have been studied by photoelectron spectroscopy. The evolution of the C 1s and Si 2p core-levels upon the adsorption of the ethylene and the formation of C-incorporated surfaces by thermal annealing is analyzed, from which the unique chemical and structural properties of √3x √3 reconstructed phase can be derived. We also discuss the coverage of the C atoms involved and their position on the √3x √3 surface in terms of a structure model.

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Language(s): eng - English
 Dates: 2007-02-01
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 319325
DOI: 10.1016/j.susc.2006.10.033
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Title: Surface Science
  Alternative Title : Surf. Sci.
Source Genre: Journal
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Pages: - Volume / Issue: 601 (3) Sequence Number: - Start / End Page: 694 - 698 Identifier: -