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  Flat conduction-band alignment at the CdS/CuInSe2 thin-film solar-cell heterojunction

Morkel, M., Weinhardt, L., Lohmuller, B., Heske, C., Umbach, E., Riedl, W., et al. (2001). Flat conduction-band alignment at the CdS/CuInSe2 thin-film solar-cell heterojunction. Applied Physics Letters, 79(27), 4482-4484. doi:10.1063/1.1428408.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-19D9-3 Version Permalink: https://hdl.handle.net/21.11116/0000-0006-B72E-9
Genre: Journal Article

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1.1428408.pdf (Publisher version), 345KB
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2001
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 Creators:
Morkel, Matthias1, Author           
Weinhardt, L., Author
Lohmuller, B., Author
Heske, Clement, Author
Umbach, Eberhard, Author
Riedl, W., Author
Zweigart, S., Author
Karg, F., Author
Affiliations:
1Chemical Physics, Fritz Haber Institute, Max Planck Society, ou_24022              

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 Abstract: By combining ultraviolet and x-ray photoelectron spectroscopy with inverse photoemission spectroscopy, we find that the conduction-band alignment at the CdS/CuInSe2 thin-film solar- cell heterojunction is flat (0.0+/-0.2 eV). Furthermore, we observe a valence-band offset of 0.8+/-0.2 eV. The electronic level alignment is dominated by (1) an unusually large surface band gap of the CuInSe2 thin film (1.4 eV), (2) by a reduced surface band gap of the CdS overlayer (2.2 eV) due to intermixing effects, and (3) by a general influence of the intermixing on the chemical state near the interface.

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Language(s): eng - English
 Dates: 2001-08-232001-10-152001-12-31
 Publication Status: Issued
 Pages: 3
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 13414
DOI: 10.1063/1.1428408
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: 3 Volume / Issue: 79 (27) Sequence Number: - Start / End Page: 4482 - 4484 Identifier: ISSN: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223