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  Role of defects and impurities in doping of GaN

Neugebauer, J., & Van de Walle, C. G. (1996). Role of defects and impurities in doping of GaN. In M. Scheffler (Ed.), 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings] (pp. 2849-2856). Singapore: World Scientific.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1FDF-B Version Permalink: https://hdl.handle.net/21.11116/0000-0007-79F7-B
Genre: Conference Paper

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 Creators:
Neugebauer, Jörg1, Author           
Van de Walle, Chris G., Author
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 1996
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 2307
 Degree: -

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Title: International Conference on the Physics of Semiconductors (ICPS)
Place of Event: Berlin
Start-/End Date: 1996-07-21 - 1996-07-26

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Title: 23rd International Conference on the Physics of Semiconductors : Berlin, Germany, July 21 - 26, 1996; [proceedings]
Source Genre: Proceedings
 Creator(s):
Scheffler, Matthias, Editor
Affiliations:
-
Publ. Info: Singapore : World Scientific
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 2849 - 2856 Identifier: ISBN: 9810229461