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  Energetics of AIN thin films and the implications for epitaxial growth on SiC

Di Felice, R., Northrup, J. E., & Neugebauer, J. (1996). Energetics of AIN thin films and the implications for epitaxial growth on SiC. Physical Review B, 54(24), R17351-R17354. doi:10.1103/PhysRevB.54.R17351.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-2007-A Version Permalink: https://hdl.handle.net/21.11116/0000-0007-6318-F
Genre: Journal Article

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PRB-54-R17351-1996.pdf (Any fulltext), 83KB
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1996
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APS
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 Creators:
Di Felice, R., Author
Northrup, J. E., Author
Neugebauer, Jörg1, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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Language(s): eng - English
 Dates: 1996
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 2286
DOI: 10.1103/PhysRevB.54.R17351
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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Affiliations:
Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 54 (24) Sequence Number: - Start / End Page: R17351 - R17354 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008