Energetics of AIN thin films and the implications for epitaxial growth on SiC

Di Felice, R.; Northrup, J. E.; Neugebauer, Jörg

doi:10.1103/PhysRevB.54.R17351

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Energetics of AIN thin films and the implications for epitaxial growth on SiC

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Neugebauer, Jörg
Theory, Fritz Haber Institute, Max Planck Society;

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Di Felice, R., Northrup, J. E., & Neugebauer, J. (1996). Energetics of AIN thin films and the implications for epitaxial growth on SiC. Physical Review B, 54(24), R17351-R17354. doi:10.1103/PhysRevB.54.R17351.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-2007-A

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