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Chemical solution deposition derived buffer layers for MOCVD- grown GaN films

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Puchinger,  M.
Former Dept. Micro/Nanomechanics of Thin Films and Biological Systems, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Wagner,  T.
Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Aldinger,  F.
Former Dept. Materials Synthesis and Microstructure Design, Max Planck Institute for Intelligent Systems, Max Planck Society;
Universität Stuttgart, Institut für Nichtmetallische Anorganische Materialien;

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Arzt,  E.
Former Dept. Micro/Nanomechanics of Thin Films and Biological Systems, Max Planck Institute for Intelligent Systems, Max Planck Society;
Universität Stuttgart, Institut für Metallkunde;

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Citation

Puchinger, M., Wagner, T., Fini, P., Kisailus, D., Beck, U., Bill, J., et al. (2001). Chemical solution deposition derived buffer layers for MOCVD- grown GaN films. Journal of Crystal Growth, 233(1-2), 57-67.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-33E9-6
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