Chemical solution deposition derived buffer layers for MOCVD- grown GaN films

Puchinger, M.; Wagner, T.; Fini, P.; Kisailus, D.; Beck, U.; Bill, J.; Aldinger, F.; Arzt, E.; Lange, F. F.

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Chemical solution deposition derived buffer layers for MOCVD- grown GaN films

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Puchinger, M.
Former Dept. Micro/Nanomechanics of Thin Films and Biological Systems, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Wagner, T.
Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Aldinger, F.
Former Dept. Materials Synthesis and Microstructure Design, Max Planck Institute for Intelligent Systems, Max Planck Society;
Universität Stuttgart, Institut für Nichtmetallische Anorganische Materialien;

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Arzt, E.
Former Dept. Micro/Nanomechanics of Thin Films and Biological Systems, Max Planck Institute for Intelligent Systems, Max Planck Society;
Universität Stuttgart, Institut für Metallkunde;

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Puchinger, M., Wagner, T., Fini, P., Kisailus, D., Beck, U., Bill, J., et al. (2001). Chemical solution deposition derived buffer layers for MOCVD- grown GaN films. Journal of Crystal Growth, 233(1-2), 57-67.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-33E9-6

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